? 2006 ixys corporation all rights reserved v ces = 1400 v i c25 = 60 a v ce(sat) 3.6 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1400 v v cgr t j = 25 c to 150 c; r ge = 1 m 1400 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c (limited by leads) 60 a i c110 t c = 110 c (igbt) 28 a i f110 t c = 110 c (diode) 15 a i cm t c = 25 c, 1 ms 150 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 i cm = 120 a (rbsoa) clamped inductive load @1400v i as t c = 25 c28a e as 360 mj p c t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-247, to-264) 1.13/10nm/lb.in. f c mounting force (plus247) 20..120 / 4.5..25 n/lb weight to-247 & plus247 6 g to-264 10 g ds99736 (10/06) g = gate c = collector e = emitter tab = collector features z high frequency igbt z high current handling capability z mos gate turn-on - drive simplicity applications z pfc circuits z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies z ac motor speed control z dc servo and robot drives z dc choppers high voltage co-pack igbt ixgh 28n140b3h1 ixgk 28n140b3h1 ixgx 28n140b3h1 c (tab) g c e to-247 (ixgh) avalanche rated e g c c (tab) c (tab) g c e plus247 (ixgx) to-264 (ixgk) symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv ces i c = 250 a 1400 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces 50 a v ge = 0 v t j = 125 c1ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c110 , v ge = 15 v, note 1 3.0 3.6 v t j = 125 c 3.05 v preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. ixgh28n140b3h1 IXGK28N140B3H1 ixgx28n140b3h1 symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs i c = i c110 ; v ce = 10 v, note 1 12 19 s c ies 2060 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 160 pf c res 60 pf q g 88 nc q ge i c = i c110 , v ge = 15 v, v ce = 0.5 v ces 12 nc q gc 38 nc t d(on) 16 ns t ri 36 ns e on 3.6 mj t d(off) 190 400 ns t fi 360 ns e off 3.9 6.5 mj t d(on) 16 ns t ri 50 ns e on 7.3 mj t d(off) 215 ns t fi 700 ns e off 6.5 mj r thjc 0.42 c/w r thcs to-247 0.21 c/w to-264 & plus247 0.15 c/w inductive load i c = i c110 , v ge = 15 v v ce = 960 v, r g = r off = 5 inductive load, t j = 125 c i c = i c110 , v ge = 15 v v ce = 960 v, r g = r off = 5 diode symbol conditions characteristic values (t j = 25 c unless otherwise specified ) min. typ. max. v f i f = 20 a; note 1 3.0 v t vj = 150c 2.65 v i rm i f = 20 a; di f /dt = -200 a/ s; t vj = 125 c 18.5 a t rr v r = 1200 v; v ge = 0 v 350 n s r thjc 0.9 c/w note 1: pulse test, t 300 s, duty cycle 2 % preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537
? 2006 ixys corporation all rights reserved ixgh28n140b3h1 IXGK28N140B3H1 ixgx28n140b3h1 fig. 1. output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 45 50 55 60 00.511.522.533.544.555.5 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 2. exteded output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 1012141618202224 v ce - volts i c - amperes v ge = 15v 7v 11v 9v 13v 5v fig. 3. output characteristics @ 125oc 0 5 10 15 20 25 30 35 40 45 50 55 60 00.511.522.533.544.555.5 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 56a i c = 28a i c = 14a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 2 3 4 5 6 7 8 5 6 7 8 9 101112131415 v ge - volts v ce - volts i c = 56a 28a 14a t j = 25oc fig. 6. input admittance 0 10 20 30 40 50 60 70 80 90 100 110 120 34567891011 v ge - volts i c - amperes t j = -40oc 25oc 125oc
ixys reserves the right to change limits, test conditions, and dimensions. ixgh28n140b3h1 IXGK28N140B3H1 ixgx28n140b3h1 fig. 7. transconductance 0 4 8 12 16 20 24 28 0 20 40 60 80 100 120 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 12. inductive switching energy loss vs. gate resistance 2 4 6 8 10 12 14 16 18 5 10152025303540455055606570 r g - ohms e off - millijoules 3 5 7 9 11 13 15 17 19 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 960v i c = 28a i c = 56a i c = 14a fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 102030405060708090 q g - nanocoulombs v ge - volts v ce = 600v i c = 28a i g = 10 ma fig. 10. reverse-bias safe operating area 0 10 20 30 40 50 60 70 80 90 100 110 120 130 200 400 600 800 1000 1200 1400 1600 v ce - volts i c - amperes t j = 125oc r g = 10 dv / dt < 10v / ns fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res fig. 11. maximum transient thermal resistance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r (th)jc - oc / w
? 2006 ixys corporation all rights reserved ixgh28n140b3h1 IXGK28N140B3H1 ixgx28n140b3h1 fig. 15. inductiv e turn-off switching tim es v s. gate resistance 600 610 620 630 640 650 660 670 680 690 700 710 720 5 10152025303540455055606570 r g - ohms t f - nanoseconds 150 200 250 300 350 400 450 500 550 600 650 700 750 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 960v i c = 56a i c = 28a fig. 13. inductive swiching energy loss vs. collector current 1 2 3 4 5 6 7 8 9 10 11 12 13 10 15 20 25 30 35 40 45 50 55 60 65 i c - amperes e off - millijoules 1 2 3 4 5 6 7 8 9 10 11 12 13 e on - millijoules e off e on - - - - r g = 5 , v ge = 15v v ce = 960v t j = 125oc t j = 25oc fig. 14. inductive swiching energy loss vs. junction temperature 0 1 2 3 4 5 6 7 8 9 10 11 12 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 1 2 3 4 5 6 7 8 9 10 11 12 13 e on - millijoules e off e on - - - - r g = 5 , v ge = 15v v ce = 960v i c = 28a i c = 56a i c = 14a fig. 16. inductive turn-off switching times vs. collector current 300 350 400 450 500 550 600 650 700 750 800 850 10 15 20 25 30 35 40 45 50 55 60 i c - amperes t f - nanoseconds 140 150 160 170 180 190 200 210 220 230 240 250 t d(off) - nanoseconds t f t d(off) - - - - r g = 5 , v ge = 15v v ce = 960v t j = 125oc t j = 25oc fig. 17. inductive turn-off switching times vs. junction temperature 350 400 450 500 550 600 650 700 750 800 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 175 180 185 190 195 200 205 210 215 220 t d(off) - nanoseconds t f t d(off) - - - - r g = 5 , v ge = 15v v ce = 960v i c = 28a i c = 50a fig. 18. inductive turn-on switching times vs. gate resistance 0 40 80 120 160 200 240 280 5 10152025303540455055606570 r g - ohms t r - nanoseconds 10 20 30 40 50 60 70 80 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 960v i c = 56a i c = 28a
ixys reserves the right to change limits, test conditions, and dimensions. ixgh28n140b3h1 IXGK28N140B3H1 ixgx28n140b3h1 fig. 19. inductive turn-on switching times vs. collector current 10 20 30 40 50 60 70 80 90 100 110 120 130 140 10 15 20 25 30 35 40 45 50 55 60 i c - amperes t r - nanoseconds 11 12 13 14 15 16 17 18 19 20 21 22 23 24 t d(on) - nanoseconds t r t d(on) - - - - r g = 5 , v ge = 15v v ce = 960v t j = 25oc, 125oc fig. 20. inductive turn-on switching times vs. junction temperature 30 40 50 60 70 80 90 100 110 120 130 140 150 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds 14 15 16 17 18 19 20 21 22 23 24 25 26 t d(on) - nanoseconds t r t d(on) - - - - r g = 5 , v ge = 15v v ce = 960v i c = 28a i c = 56a
? 2006 ixys corporation all rights reserved dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) plus 247 tm (ixgx) outline package outlines to-264 (ixgk) outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 (ixgh) outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source tab - drain
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